Kazushiro Nomura

Statistics

Publications

Citations

978

H-Index

Active since

2013

Affiliations

Tokyo University of Agriculture and Technology(Current)

Linköping University

National Institute of Information and Communications Technology

Kazushiro Nomura is an author at Tokyo University of Agriculture and Technology specializing in materials science, natural sciences, and semiconductor crystal growth.

Publications per year

2013–2016

Publications

Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy

Hisashi Murakami, Kazushiro Nomura, Ken Goto et al. · Applied Physics Express · 2014 · 402 citations

Natural Sciences, Materials Engineering, Materials Science +17

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

Masataka Higashiwaki, Keita Konishi, Kohei Sasaki et al. · Applied Physics Letters · 2016 · 342 citations

Engineering, Electrical Engineering, Materials Science +17

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Kazushiro Nomura, Ken Goto, Rie Togashi et al. · Journal of Crystal Growth · 2014 · 127 citations

Natural Sciences, Materials Engineering, Materials Science +16

Thermal stability of β-Ga2O3in mixed flows of H2and N2

Rie Togashi, Kazushiro Nomura, Eguchi Chihiro et al. · Japanese Journal of Applied Physics · 2015 · 56 citations

Natural Sciences, Chemical Engineering, Chemistry +13

Ga<inf>2</inf>O<inf>3</inf> Schottky barrier diodes with n&#x2212;-Ga<inf>2</inf>O<inf>3</inf> drift layers grown by HVPE

Masataka Higashiwaki, Kohei Sasaki, Ken Goto et al. · 2015 · 40 citations

Engineering, Electrical Engineering, Materials Science +16

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