Concepedia

Rie Togashi

RT

22

Publications

1.6K

Citations

16

H-Index

2006

Active since

Affiliations

Tokyo University of Agriculture and Technology(Current)

Linköping University

National Institute of Information and Communications Technology

Tokuyama (Japan)

Shibuya (Japan)

Rie Togashi is an author at Tokyo University of Agriculture and Technology specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceSurface ScienceChemistryMaterials EngineeringPhysicsThermodynamicsNatural SciencesHydrogen

Publications per year

2006–2018

22

Publications

22

Homoepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub>layers by halide vapor phase epitaxy

Hisashi Murakami, Kazushiro Nomura, Ken Goto et al. · Applied Physics Express · 2014 · 384 citations

Oxide Heterostructures, Materials Science, Engineering +13

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on <i>n</i>––Ga2O3 drift layers grown by halide vapor phase epitaxy

Masataka Higashiwaki, Keita Konishi, Kohei Sasaki et al. · Applied Physics Letters · 2016 · 336 citations

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi></mml:math>-gallium oxide single crystals

M. Schubert, Rafał Korlacki, Sean Knight et al. · Physical review. B./Physical review. B · 2016 · 206 citations · Full text

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Kazushiro Nomura, Ken Goto, Rie Togashi et al. · Journal of Crystal Growth · 2014 · 121 citations

Materials Science, Materials Engineering, β-Ga2o3 Growth +7

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Nguyên Tiên Són, Ken Goto, K. Nomura et al. · Journal of Applied Physics · 2016 · 92 citations · Full text

Engineering, Spin-charge Conversion, Solid-state Chemistry +16

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