Shigenobu Yamakoshi

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.8K citations

Engineering, Electrical Engineering, Materials Engineering +17

Recent progress in Ga₂O₃power devices

Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami et al. · Semiconductor Science and Technology · 2016 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

High-quality β-Ga₂O₃ single crystals grown by edge-defined film-fed growth

Akito Kuramata, Kimiyoshi Koshi, Shinya Watanabe et al. · Japanese Journal of Applied Physics · 2016 · 1K citations

Engineering, Materials Engineering, Materials Science +17

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura et al. · Applied Physics Letters · 2013 · 719 citations

Engineering, Electrical Engineering, Materials Science +17

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

Kohei Sasaki, Akito Kuramata, Takekazu Masui et al. · Applied Physics Express · 2012 · 610 citations

Engineering, Electrical Engineering, Materials Science +17