Applied Physics Letters · 1991 · 1.6K citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIi-vi SemiconductorsLaser DiodesOptoelectronic DevicesQuantum WellsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesBlue Laser DiodesCoherent Light SourcesCurrent InjectionGreen Laser DiodesQuantum Well Band StructureQuantum Well Laser DiodesSemiconductor Laser Diodes
The first laser diodes fabricated from wide-band-gap II-VI semiconductors are demonstrated. These devices emit coherent light at a wavelength of 490 nm from a ZnSe-based single-quantum-well structure under pulsed current injection at 77 K. This is the shortest wavelength ever generated by a semiconductor laser diode.
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Characterization of <i>p</i>-type ZnSe
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Growth of <i>p</i>-type ZnSe:Li by molecular beam epitaxy
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