J. E. Potts

Characterization of <i>p</i>-type ZnSe

M. A. Haase, Hai‐Ping Cheng, J. M. DePuydt et al. · Journal of Applied Physics · 1990 · 130 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Growth of <i>p</i>-type ZnSe:Li by molecular beam epitaxy

Hai‐Ping Cheng, J. M. DePuydt, J. E. Potts et al. · Applied Physics Letters · 1988 · 109 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Growth of p- and n-type ZnSe by molecular beam epitaxy

Hai‐Ping Cheng, J. M. DePuydt, J. E. Potts et al. · Journal of Crystal Growth · 1989 · 85 citations

Materials Science, Ii-vi Semiconductor, Engineering +5

Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio

J. M. DePuydt, Hai‐Ping Cheng, J. E. Potts et al. · Journal of Applied Physics · 1987 · 82 citations · Full text

Engineering, Crystal Growth Technology, Beam Pressure Ratio +18

Raman scattering from CuBr and CuI

J. E. Potts, R. C. Hanson, Charles Walker et al. · Solid State Communications · 1973 · 80 citations

Physics, Natural Sciences, Spectroscopy +3