E. Kuokštis

III–Nitride UV Devices

M. Asif Khan, M. Shatalov, H. P. Maruska et al. · Japanese Journal of Applied Physics · 2005 · 419 citations · Full text

Ultraviolet Light, Photonic Sensor, Optical Materials +18

Visible light-emitting diodes using <i>a</i>-plane GaN–InGaN multiple quantum wells over <i>r</i>-plane sapphire

A. Chitnis, Changqing Chen, V. Adivarahan et al. · Applied Physics Letters · 2004 · 208 citations

Engineering, Visible Light-emitting Diodes, Optoelectronic Devices +17

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

E. Kuokštis, Jinwei Yang, G. Simin et al. · Applied Physics Letters · 2002 · 160 citations

Engineering, Edge Emission, Optoelectronic Devices +20

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Jianping Zhang, M. Asif Khan, Wenhong Sun et al. · Applied Physics Letters · 2002 · 132 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +18

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

E. Kuokštis, C. Q. Chen, Mikhail Gaevski et al. · Applied Physics Letters · 2002 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +13