S. Francoeur

Photooxidation and quantum confinement effects in exfoliated black phosphorus

Alexandre Favron, Étienne Gaufrès, Frédéric Fossard et al. · Nature Materials · 2015 · 1.4K citations

Natural Sciences, Materials Engineering, Materials Science +11

Molecular beam epitaxy growth of GaAs1−xBix

S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 453 citations

Natural Sciences, Materials Engineering, Materials Science +17

Band gap of GaAs1−xBix, 0<x<3.6%

S. Francoeur, M. J. Seong, A. Mascarenhas et al. · Applied Physics Letters · 2003 · 427 citations

Natural Sciences, Materials Science, Physics +17

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

S. A. Nikishin, N. N. Faleev, Vladimir G. Antipov et al. · Applied Physics Letters · 1999 · 201 citations

Engineering, Materials Engineering, Materials Science +14

Luminescence of as-grown and thermally annealed GaAsN/GaAs

S. Francoeur, Gandhi Sivaraman, Y. Qiu et al. · Applied Physics Letters · 1998 · 160 citations

Natural Sciences, Materials Engineering, Materials Science +17