Band gap of GaAs1−xBix, 0<x<3.6%

Abstract

The band gap of GaAsBi epitaxial layers as a function of bismuth concentration up to 3.6% is determined. The optical transitions were measured by modulated electroreflectance. The energy of the band gap decreases at a linearized rate of 88 meV/% Bi, or 83 meV/% Bi for the heavy hole to conduction band transition for GaAsBi strained to GaAs. The valence-band splitting increases faster than that of GaAs under similar compressive strain whereas the temperature dependence of the observed GaAsBi transitions is similar to that of GaAs.