T. Tiedje

Band gap of GaAs1−xBix, 0<x<3.6%

S. Francoeur, M. J. Seong, A. Mascarenhas et al. · Applied Physics Letters · 2003 · 426 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Temperature dependence of the Urbach edge in GaAs

S. R. Johnson, T. Tiedje · Journal of Applied Physics · 1995 · 204 citations

Semiconductors, Urbach Edge, Semiconductor Technology +14

Field-emission SEM imaging of compositional and doping layer semiconductor superlattices

D. D. Perovic, Martin R. Castell, A. Howie et al. · Ultramicroscopy · 1995 · 178 citations

Materials Science, Engineering, Applied Physics +5

Optical absorption edge of semi-insulating GaAs and InP at high temperatures

M. Beaudoin, A. J. G. DeVries, S. R. Johnson et al. · Applied Physics Letters · 1997 · 168 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Observation of leaky slab modes in an air-bridged semiconductor waveguide with a two-dimensional photonic lattice

Manoj Kanskar, P. Paddon, V. Pacradouni et al. · Applied Physics Letters · 1997 · 132 citations

Optical Materials, Engineering, Air-bridged Semiconductor Waveguide +20