Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon

George D. Cody, T. Tiedje, B. Abeles, +2

Physical Review Letters

Materials ScienceIi-vi SemiconductorOptical MaterialsOptical Absorption EdgeEngineering +12

Limiting efficiency of silicon solar cells

T. Tiedje, Eli Yablonovitch, George D. Cody, +1

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringEnergy EfficiencyOptical PropertiesSolar Energy Utilisation +10

A physical interpretation of dispersive transport in disordered semiconductors

T. Tiedje, Albert Rose

Solid State Communications

SemiconductorsDispersive TransportEngineeringPhysicsApplied Physics +5

Evidence for Exponential Band Tails in Amorphous Silicon Hydride

T. Tiedje, J. M. Cebulka, D.L. Morel, +1

Physical Review Letters

EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsAmorphous Silicon Hydride +9

Amorphous Semiconductor Superlattices

B. Abeles, T. Tiedje

Physical Review Letters

Optical MaterialsEngineeringAmorphous Semiconductor SuperlatticesOptical AbsorptionOptoelectronic Devices +16

Molecular beam epitaxy growth of GaAs1−xBix

S. Tixier, M. Adamcyk, T. Tiedje, +4

Applied Physics Letters

Materials ScienceSemiconductorsGaas 1−XBismuth ConcentrationsEngineering +9

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Zahida Batool, K. Hild, T. J. C. Hosea, +3

Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesBandgap Energy EgSemiconductors +18

Composition dependence of photoluminescence of GaAs1−xBix alloys

Xianfeng Lu, Daniel A. Beaton, Ryan B. Lewis, +2

Applied Physics Letters

EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor +14

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

X. Lu, Daniel A. Beaton, Ryan B. Lewis, +2

Applied Physics Letters

Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringPhysics +10

Growth of high Bi concentration GaAs_1−xBi_x by molecular beam epitaxy

Ryan B. Lewis, Mostafa Masnadi‐Shirazi, T. Tiedje

Applied Physics Letters

SemiconductorsMaterials ScienceElectronic DevicesEngineeringPhysics +10