Publication | Closed Access
Theory of Substitutional Deep Traps in Covalent Semiconductors
573
Citations
5
References
1980
Year
EngineeringCovalent SemiconductorsSemiconductor NanostructuresSemiconductorsZinc-blende SemiconductorsQuantum MaterialsCharge Carrier TransportMaterials SciencePhysicsCrystalline DefectsIntrinsic ImpuritySemiconductor MaterialQuantum ChemistrySolid-state PhysicIdeal VacancyNatural SciencesApplied PhysicsCondensed Matter PhysicsImpurity Levels
The energies of substitutional deep ${A}_{1}$ impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies.
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