J. Johnson

Silicon CMOS devices beyond scaling

Wilfried Haensch, E. Nowak, R.H. Dennard et al. · IBM Journal of Research and Development · 2006 · 448 citations

Engineering, Vlsi Design, Integrated Circuits +17

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

S.J. Jeng, B. Jagannathan, Jae-Sung Rieh et al. · IEEE Electron Device Letters · 2001 · 88 citations

Engineering, Narrow Base Width, Integrated Circuits +18

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications

J. Johnson, Alvin Joseph, David C. Sheridan et al. · IEEE Journal of Solid-State Circuits · 2004 · 68 citations

Low-power Electronics, Electrical Engineering, Engineering +12

Structural dependence of the thermal resistance of trench-isolated bipolar transistors

Jae-Sung Rieh, J. Johnson, S. Furkay et al. · 2003 · 56 citations

Device Modeling, Electrical Engineering, Structural Dependence +15

A simulation study on thin SOI bipolar transistors with fully or partially depleted collector

Q. Ouyang, Jin Cai, T.H. Ning et al. · 2003 · 25 citations

Device Modeling, Electrical Engineering, Engineering +11