Q. Ouyang - Concepedia

Author

Q. Ouyang

IBM Research - Thomas J. Watson Research Center ORCID

Also Known As

Q Ouyang, Q. C. Ouyang, Q. Christine Ouyang, Q. Ouyang, Q.C. Ouyang, Qi Ouyang

Publications

830

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)The University of Texas at Austin Beijing Jiaotong University Motorola (United States)

About

Q. Ouyang is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	776
2	Applied Physics	12	16	595
3	Computer Engineering	5	5	161
4	Computer Science	3	3	73
5	Business	1	1	30

Q. Ouyang

Publications

790

Citations

H-Index

Page 1

	Year	Citations
High-Speed Germanium-on-SOI Lateral PIN Photodiodes G. Dehlinger, Steven J. Koester, J.D. Schaub, IEEE Photonics Technology Letters PhotonicsElectrical EngineeringElectronic DevicesIncident WavelengthEngineering	2004	155
Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond Hikaru Kawasaki, V. Basker, T. Yamashita, EngineeringVlsi DesignSidewall Image TransferIntegrated CircuitsInterconnect (Integrated Circuits)	2009	94
A deep learning approach to anomaly detection in geological carbon sequestration sites using pressure measurements Zhi Zhong, Alexander Y. Sun, Qian Yang, Journal of Hydrology Geochemical AnomalyAnomaly DetectionMachine LearningData ScienceGeological Carbon Sequestration	2019	78
Demonstration of highly scaled FinFET SRAM cells with high-&#x03BA;/metal gate and investigation of characteristic variability for the 32 nm node and beyond Hikaru Kawasaki, Marwan Khater, Michael Guillorn, Electrical EngineeringEngineeringCrystalline DefectsStatic Noise MarginNanotechnology	2008	61
Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources Zhen Zhang, F. Pagette, C. D'Emic, IEEE Electron Device Letters EngineeringSharp ReductionSemiconductor DeviceSemiconductorsNanoelectronics	2010	59
Improved hot-carrier and short-channel performance in vertical nMOSFETs with graded channel doping Xiang-Dong Chen, Q. Ouyang, Geng Wang, IEEE Transactions on Electron Devices Electrical EngineeringGraded Doped ChannelEngineeringVertical Sub-100-nm NmosfetsNanoelectronics	2002	36
A Bus Passenger Flow Prediction Model Fused with Point-of-Interest Data Based on Extreme Gradient Boosting Wanjun Lv, Yongbo Lv, Q. Ouyang, Applied Sciences Transport Network AnalysisEngineeringMachine LearningTraffic FlowPoint-of-interest Data	2022	32
Models for electron and hole mobilities in MOS accumulation layers S. Mudanai, G. Chindalore, W.-K. Shih, IEEE Transactions on Electron Devices EngineeringCharge TransportElectronic StructureSemiconductor DeviceElectron Physic	1999	30
Methodology for Extracting Potential Customized Bus Routes Based on Bus Smart Card Data Jing Li, Yongbo Lv, Jihui Ma, Energies Transport Network AnalysisEngineeringSmart CityIntelligent Traffic ManagementData Science	2018	30
Hole and electron mobility enhancement in strained SiGe vertical MOSFETs Xiang-Dong Chen, Kou‐Chen Liu, Q. Ouyang, IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringStrained SigeNanoelectronics	2001	28

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