D. Boyd

Extension and source/drain design for high-performance finFET devices

J. Kedzierski, M. Ieong, E. Nowak et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Engineering, Electrical Engineering, Electronic Materials +16

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky et al. · 2003 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics

Min Yang, E. P. Gusev, M. Ieong et al. · IEEE Electron Device Letters · 2003 · 166 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi et al. · 2004 · 156 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 144 citations

Engineering, Electrical Engineering, Materials Science +15