T. Kanarsky

Extension and source/drain design for high-performance finFET devices

J. Kedzierski, M. Ieong, E. Nowak et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Low-power Electronics, Extension Implants, Electrical Engineering +14

Extreme scaling with ultra-thin Si channel MOSFETs

B. Doris, M. Ieong, T. Kanarsky et al. · 2003 · 181 citations

Electrical Engineering, Engineering, Technology Scaling +8

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky et al. · 2003 · 171 citations

Electrical Engineering, Engineering, Total Gate Silicidation +9

Strained Si NMOSFETs for high performance CMOS technology

K. Rim, Steven J. Koester, M. Hargrove et al. · 2002 · 151 citations

Materials Engineering, Electrical Engineering, Semiconductor Device +11

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 143 citations

Electrical Engineering, Engineering, Strained Si Devices +11