T. Kanarsky

Extension and source/drain design for high-performance finFET devices

J. Kedzierski, M. Ieong, E. Nowak et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Engineering, Electrical Engineering, Electronic Materials +16

Extreme scaling with ultra-thin Si channel MOSFETs

B. Doris, M. Ieong, T. Kanarsky et al. · 2003 · 181 citations

Engineering, Electrical Engineering, Electronic Materials +16

Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

J. Kedzierski, E. Nowak, T. Kanarsky et al. · 2003 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

Strained Si NMOSFETs for high performance CMOS technology

K. Rim, Steven J. Koester, M. Hargrove et al. · 2002 · 152 citations

Engineering, Electrical Engineering, Materials Science +15

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 144 citations

Engineering, Electrical Engineering, Materials Science +15