Gilles Gasiot

Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering

Gilles Gasiot, D. Giot, P. Roche · IEEE Transactions on Nuclear Science · 2007 · 132 citations

Electrical Engineering, Engineering, Vlsi Design +14

Technology downscaling worsening radiation effects in bulk: SOI to the rescue

Philippe Roché, Jean‐Luc Autran, Gilles Gasiot et al. · 2013 · 110 citations

Engineering, Vlsi Design, Radiation Effect +22

Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

Ph. Roche, Gilles Gasiot, Keith Forbes et al. · IEEE Transactions on Nuclear Science · 2003 · 92 citations

Electrical Engineering, Bulk Srams, Vlsi Design +12

Impacts of front-end and middle-end process modifications on terrestrial soft error rate

P. Roche, Gilles Gasiot · IEEE Transactions on Device and Materials Reliability · 2005 · 91 citations

Engineering, Vlsi Design, Industrial Engineering +16

Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations

V. Ferlet-Cavrois, Gilles Gasiot, C. Marcandella et al. · IEEE Transactions on Nuclear Science · 2002 · 89 citations

Dose-rate Irradiations, Engineering, Bipolar Amplification +16