Philippe Roché

Technology downscaling worsening radiation effects in bulk: SOI to the rescue

Philippe Roché, Jean‐Luc Autran, Gilles Gasiot et al. · 2013 · 110 citations

Engineering, Vlsi Design, Radiation Effect +22

Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

Sławosz Uznański, Gilles Gasiot, Philippe Roché et al. · IEEE Transactions on Nuclear Science · 2010 · 76 citations

Single Event Upset, Engineering, Vlsi Design +16

Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

D. Giot, Philippe Roché, Gilles Gasiot et al. · IEEE Transactions on Nuclear Science · 2008 · 68 citations

Non-volatile Memory, Engineering, Computer Architecture +18

Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations

D. Giot, Philippe Roché, Gilles Gasiot et al. · IEEE Transactions on Nuclear Science · 2007 · 59 citations

Multiple-bit Upset Analysis, Non-volatile Memory, Engineering +17

A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling

Philippe Roché, Gilles Gasiot, Sławosz Uznański et al. · IEEE Transactions on Nuclear Science · 2010 · 49 citations

Engineering, Vlsi Design, Heavy Ion +17