Philippe Roché - Concepedia

Author

Philippe Roché

Also Known As

Baseilhac, Stéphane, PHILIPPE ROCHE, Philippe Roche, Philippe Roché, Roche Philippe, Roche, Philippe, Stéphane Baseilhac

126

Publications

1.4K

Citations

H-Index

108

Concepts

All Affiliations

STMicroelectronics (France)Centre National de la Recherche Scientifique Institut des Matériaux, de Microélectronique et des Nanosciences de Provence Aix-Marseille Université STMicroelectronics (Switzerland)

About

Philippe Roché is an author at STMicroelectronics (France) specializing in engineering, computer engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	36	1K
2	Applied Physics	12	14	369
3	Education	3	3	64
4	Health Sciences	3	3	171
5	Natural Sciences	3	3	58

Philippe Roché

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Technology downscaling worsening radiation effects in bulk: SOI to the rescue Philippe Roché, Jean‐Luc Autran, Gilles Gasiot, EngineeringVlsi DesignRadiation EffectFinfet AlternativesRadiation Exposure	2013	110
Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops Sławosz Uznański, Gilles Gasiot, Philippe Roché, IEEE Transactions on Nuclear Science Single Event UpsetEngineeringVlsi DesignComputer ArchitectureMulti-channel Memory Architecture	2010	76
Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs D. Giot, Philippe Roché, Gilles Gasiot, IEEE Transactions on Nuclear Science Non-volatile MemoryEngineeringComputer ArchitectureHeavy Ion PhysicNanoelectronics	2008	68
Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations D. Giot, Philippe Roché, Gilles Gasiot, IEEE Transactions on Nuclear Science Multiple-bit Upset AnalysisNon-volatile MemoryEngineeringComputer ArchitectureDefect Tolerance	2007	59
A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling Philippe Roché, Gilles Gasiot, Sławosz Uznański, IEEE Transactions on Nuclear Science EngineeringVlsi DesignHeavy IonElectromagnetic CompatibilityRadiation Protection	2010	49
SER/SEL performances of SRAMs in UTBB FDSOI28 and comparisons with PDSOI and BULK counterparts Gilles Gasiot, Dimitri Soussan, Maximilien Glorieux, Electrical EngineeringEngineeringConsumer ApplicationsUtbb Fdsoi28Bulk Counterparts	2014	47
8.4 A 0.33V/-40&#x00B0;C process/temperature closed-loop compensation SoC embedding all-digital clock multiplier and DC-DC converter exploiting FDSOI 28nm back-gate biasing Sylvain Clerc, Mehdi Saligane, Fady Abouzeid, EngineeringVlsi DesignBody BiasIntegrated CircuitsDc-dc Converter	2015	43
A 225 μm ${}^{2}$ Probe Single-Point Calibration Digital Temperature Sensor Using Body-Bias Adjustment in 28 nm FD-SOI CMOS Martin Cochet, Ben Keller, Sylvain Clerc, IEEE Solid-State Circuits Letters EngineeringMeasurementEducationIntegrated CircuitsSensor Technology	2018	42
Critical overview of loops and foams Sergei Alexandrov, Philippe Roché Physics Reports Critical OverviewEngineeringMechanicsMechanical EngineeringNumerical Simulation	2011	39
An industrial fault injection platform for soft-error dependability analysis and hardening of complex system-on-a-chip Jean-Marc Daveau, Alexandre Blampey, Gilles Gasiot, EngineeringHardware Verification LanguageIndustrial EngineeringVerificationComputer Architecture	2009	39

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