D. Giot

Multiple Cell Upsets as the Key Contribution to the Total SER of 65 nm CMOS SRAMs and Its Dependence on Well Engineering

Gilles Gasiot, D. Giot, P. Roche · IEEE Transactions on Nuclear Science · 2007 · 132 citations

Engineering, Computer Engineering, Electrical Engineering +13

Factors That Impact the Critical Charge of Memory Elements

Tino Heijmen, D. Giot, P. Roche · 2006 · 130 citations

Engineering, Computer Engineering, Electrical Engineering +15

A Comprehensive Study on the Soft-Error Rate of Flip-Flops From 90-nm Production Libraries

Tino Heijmen, Philippe Roche, Gilles Gasiot et al. · IEEE Transactions on Device and Materials Reliability · 2007 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +14

Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

D. Giot, Philippe Roché, Gilles Gasiot et al. · IEEE Transactions on Nuclear Science · 2008 · 68 citations

Engineering, Computer Engineering, Electrical Engineering +11

Alpha-Induced Multiple Cell Upsets in Standard and Radiation Hardened SRAMs Manufactured in a 65 nm CMOS Technology

Gilles Gasiot, D. Giot, P. Roche · IEEE Transactions on Nuclear Science · 2006 · 63 citations

Engineering, Computer Engineering, Electrical Engineering +16