IEEE Transactions on Nuclear Science · 2010 · 76 citations · 17 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsRadiation TransportSemiconductor DevicesCmos Circuit DesignDevice ModelingDevice SimulationHeavy-ion PhysicsIntegrated Circuit DesignRadiation HardeningLeakage Current ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingRadiation EffectsRadiation-hardened Integrated CircuitsRadiation-hardened System ArchitectureRadiation-hardening TechniquesSingle Event EffectsSingle Event Upset Modeling
A proprietary Monte-Carlo simulation code dedicated to heavy ion cross-section prediction has been developed. The code is based on diffusion-collection equations, takes into account recombination processes, uses an improved drain strike model, and includes new upset analysis algorithms for different circuit architectures. Simulated cross-sections are compared to heavy ion experimental characterizations for commercial bulk 65-nm single- and dual-port SRAMs. Simulation capabilities of much more complex circuits are demonstrated considering a 65-nm radiation-hardened-by-design (RHBD) Flip-Flop (FF).
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