C. Tavernier

Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

Yann‐Michel Niquet, D. Rideau, C. Tavernier et al. · Physical Review B · 2009 · 173 citations · Full text

Natural Sciences, Materials Science, Physics +17

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Ph. Roche, J.M. Palau, G. Bruguier et al. · IEEE Transactions on Nuclear Science · 1999 · 136 citations

Engineering, Computer Engineering, Electrical Engineering +17

Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

Sławosz Uznański, Gilles Gasiot, Philippe Roché et al. · IEEE Transactions on Nuclear Science · 2010 · 76 citations

Engineering, Computer Engineering, Electrical Engineering +17

PIPAC versus HIPEC: cisplatin spatial distribution and diffusion in a swine model

Axel Davigo, Guillaume Passot, Olivia Vassal et al. · International Journal of Hyperthermia · 2020 · 26 citations · Full text

Pharmacy, Pharmacokinetics, Pharmacology +14