Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations

Abstract

SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates are discussed as a function of the LET and beam tilt. A new sensitive area devoted to MBU is computed with full 3D TCAD simulations on single and adjacent memory cells.