Concepedia

Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node

Ph. Roche, Gilles Gasiot, Keith Forbes, V. O'Sullivan, V. Ferlet

IEEE Transactions on Nuclear Science · 2003 · 92 citations · 20 references

Concepts

Electrical EngineeringBulk SramsVlsi DesignEngineeringNanoelectronicsApplied PhysicsComputer EngineeringComputer Architecture130-Nm Technology NodeExperimental AserSemiconductor MemorySoft Error RateCommercial SoiMicroelectronicsMulti-channel Memory Architecture

Abstract

This paper presents experimental ASER on SOI and BULK SRAMs for the 250-, 130-, and 90-nm technologies. The key parameters controlling soft error rate (SER) in these technologies are modeled with Monte Carlo simulations to predict SER to the 65-nm node.

References

20

Measurement and reporting of alpha particle and terrestrial cosmic ray induced soft errors in semiconductor devices

Jedec · Medical Entomology and Zoology · 2001 · 352 citations

Semiconductor Devices, Electrical Engineering, Engineering +8

The Los Alamos National Laboratory Spallation Neutron Sources

P.W. Lisowski, C. D. Bowman, G.J. Russell et al. · Nuclear Science and Engineering · 1990 · 342 citations

Engineering, Nuclear Physics, Fast Neutrons +17

The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction

R. Baumann · 2003 · 314 citations

Engineering, Vlsi Design, Logic Scaling Trends +22

Rate prediction for single event effects-a critique

E.L. Petersen, J.C. Pickel, James H. Adams et al. · IEEE Transactions on Nuclear Science · 1992 · 277 citations

Single Event Upset, Engineering, Rare Event Estimation +17

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Ph. Roche, J.M. Palau, G. Bruguier et al. · IEEE Transactions on Nuclear Science · 1999 · 135 citations

Non-volatile Memory, Engineering, Vlsi Design +18