A. Torres

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.2K citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow et al. · IEEE Transactions on Nuclear Science · 2005 · 95 citations

Engineering, Laser Science, Laser-plasma Interaction +20

Total ionizing dose effects on deca-nanometer fully depleted SOI devices

P. Paillet, Marc Gaillardin, Véronique Ferlet-Cavrois et al. · IEEE Transactions on Nuclear Science · 2005 · 82 citations

Engineering, Dose Effects, Silicon On Insulator +16

Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below

C. Fenouillet-Béranger, P. Perreau, S. Denorme et al. · Solid-State Electronics · 2010 · 63 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Charge enhancement effect in NMOS bulk transistors induced by heavy ion Irradiation-comparison with SOI

V. Ferlet-Cavrois, György Vizkelethy, Philippe Paillet et al. · IEEE Transactions on Nuclear Science · 2004 · 61 citations

Nmos Bulk Transistors, Electrical Engineering, Ion Implantation +14