György Vizkelethy - Concepedia

Author

György Vizkelethy

Also Known As

Alex Belianinov, G Vizkelethy, G Vı́zkelethy, G. Vizkelethy, GYORGY VIZKELETHY, Gyorgy Vizkelethy, György Vizkelethy, Harold Hjalmarson, Jesse Lutz, Nicholas Asper

228

Publications

2.5K

Citations

H-Index

103

Concepts

All Affiliations

Sandia National Laboratories Sandia National Laboratories California Vanderbilt University Georgia Institute of Technology Goddard Space Flight Center

About

György Vizkelethy is an author at Sandia National Laboratories specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	51	1.9K
2	Natural Sciences	9	9	558
3	Medicine	4	4	87
4	Health Sciences	2	2	58
5	Education	1	1	89

György Vizkelethy

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsVlsi DesignComputer ArchitectureIntegrated Circuits	2006	151
Multiple-Bit Upset in 130 nm CMOS Technology Alan D. Tipton, Jonathan A. Pellish, Robert A. Reed, IEEE Transactions on Nuclear Science EngineeringVlsi DesignMem TestingComputer ArchitectureIntegrated Circuits	2006	102
The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process Jonathan R. Ahlbin, Matthew J. Gadlage, Dennis R. Ball, IEEE Transactions on Nuclear Science Pmos TransistorsElectrical EngineeringPhysical Design (Electronics)EngineeringVlsi Design	2010	97
Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow, IEEE Transactions on Nuclear Science EngineeringLaser ScienceLaser-plasma InteractionBipolar AmplificationSemiconductor Device	2005	95
Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes Matthew J. Gadlage, Jonathan R. Ahlbin, Balaji Narasimham, IEEE Transactions on Nuclear Science Set Pulse WidthsEngineeringVlsi DesignMeasurementEducation	2010	89
Initial Assessment of the Effects of Radiation on the Electrical Characteristics of ${\rm TaO}_{\rm x}$ Memristive Memories Matthew Marinella, Scott M. Dalton, Patrick R. Mickel, IEEE Transactions on Nuclear Science EngineeringRadiation Materials ScienceEmerging Memory TechnologyIntegrated Circuits\Rm Tao	2012	77
Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs Farah El-Mamouni, En Xia Zhang, N. D. Pate, IEEE Transactions on Nuclear Science PhotonicsElectrical EngineeringAdvanced Bulk FinfetsEngineeringPhysics	2011	70
Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits Robert A. Reed, Paul W. Marshall, J.C. Pickel, IEEE Transactions on Nuclear Science EngineeringVlsi DesignSingle-event UpsetsSemiconductor DeviceHeavy-ion Broad-beam	2003	69
Charge enhancement effect in NMOS bulk transistors induced by heavy ion Irradiation-comparison with SOI V. Ferlet-Cavrois, György Vizkelethy, Philippe Paillet, IEEE Transactions on Nuclear Science Nmos Bulk TransistorsElectrical EngineeringIon ImplantationEngineeringCharge Enhancement Effect	2004	61
Hardness Assurance for Proton Direct Ionization-Induced SEEs Using<newline/> a High-Energy Proton Beam Nathaniel A. Dodds, J.R. Schwank, M.R. Shaneyfelt, IEEE Transactions on Nuclear Science Hardness AssuranceTotal Error RateExperimental Nuclear PhysicsNuclear PhysicsPhysics	2014	57

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