György Vizkelethy

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

V. Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin et al. · IEEE Transactions on Nuclear Science · 2006 · 151 citations

Engineering, Nuclear Physics, Vlsi Design +22

Multiple-Bit Upset in 130 nm CMOS Technology

Alan D. Tipton, Jonathan A. Pellish, Robert A. Reed et al. · IEEE Transactions on Nuclear Science · 2006 · 102 citations

Engineering, Vlsi Design, Mem Testing +18

The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process

Jonathan R. Ahlbin, Matthew J. Gadlage, Dennis R. Ball et al. · IEEE Transactions on Nuclear Science · 2010 · 97 citations

Pmos Transistors, Electrical Engineering, Physical Design (Electronics) +15

Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

V. Ferlet-Cavrois, Philippe Paillet, Dale McMorrow et al. · IEEE Transactions on Nuclear Science · 2005 · 95 citations

Engineering, Laser Science, Laser-plasma Interaction +20

Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes

Matthew J. Gadlage, Jonathan R. Ahlbin, Balaji Narasimham et al. · IEEE Transactions on Nuclear Science · 2010 · 89 citations

Set Pulse Widths, Engineering, Vlsi Design +17