Study of transient current induced by heavy-ion in NMOS/SOI transistors

Abstract

The parasitic bipolar transistor of NMOS/SOI transistors is a key element to determine the single-event upset (SEU) sensitivity. Parasitic bipolar transistor response has been investigated through transient current measurements induced by high energy heavy ions and three-dimensional (3-D) simulations. Experimental results reported allow to estimate the parasitic current gain as a function of the heavy ion location in the MOS transistor.