P. V. Dressendorfer

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Patrick M. Lenahan, P. V. Dressendorfer · Journal of Applied Physics · 1984 · 716 citations

Engineering, Materials Engineering, Materials Science +17

Correlating the Radiation Response of MOS Capacitors and Transistors

P.S. Winokur, J.R. Schwank, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 417 citations

Engineering, Electrical Engineering, Microelectronics +15

Device modeling of ferroelectric capacitors

S. L. Miller, R.D. Nasby, J.R. Schwank et al. · Journal of Applied Physics · 1990 · 385 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Physical Mechanisms Contributing to Device "Rebound"

J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 360 citations

Engineering, Electrical Engineering, Materials Science +14

An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface

Patrick M. Lenahan, P. V. Dressendorfer · Journal of Applied Physics · 1983 · 171 citations

Natural Sciences, Materials Science, Physics +17