Patrick M. Lenahan

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Patrick M. Lenahan, P. V. Dressendorfer · Journal of Applied Physics · 1984 · 716 citations

Engineering, Materials Engineering, Materials Science +17

Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study

D. T. Krick, Patrick M. Lenahan, Jerzy Kanicki · Journal of Applied Physics · 1988 · 177 citations

Engineering, Materials Engineering, Materials Science +17

An electron spin resonance study of radiation-induced electrically active paramagnetic centers at the Si/SiO2 interface

Patrick M. Lenahan, P. V. Dressendorfer · Journal of Applied Physics · 1983 · 171 citations

Natural Sciences, Materials Science, Physics +17

Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates

Yong Yun Kim, Patrick M. Lenahan · Journal of Applied Physics · 1988 · 166 citations

Engineering, Materials Engineering, Materials Science +15

First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride

W. L. Warren, Patrick M. Lenahan, Sean E. Curry · Physical Review Letters · 1990 · 145 citations

Natural Sciences, Chemistry, Physics +15