F.W. Sexton - Concepedia

Author

F.W. Sexton

Also Known As

E Normand, F Sexton, F. Sexton, F. W. SEXTON, F. W. Sexton, F.W Sexton, F.W. Sexton, Fred Sexton, Fred W. Sexton, Sexton, F.

122

Publications

4.1K

Citations

H-Index

121

Concepts

All Affiliations

Sandia National Laboratories Sandia National Laboratories California Vanderbilt University The University of Melbourne Goddard Space Flight Center

About

F.W. Sexton is an author at Sandia National Laboratories specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	63	3.9K
2	Natural Sciences	11	11	564
3	Medicine	10	10	473
4	Health Sciences	3	3	102
5	Education	1	1	41

F.W. Sexton

Publications

Citations

H-Index

Page 1

	Year	Citations
Physical Mechanisms Contributing to Device "Rebound" J.R. Schwank, P.S. Winokur, P. J. McWhorter, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringPhysicsMechanics	1984	358
Destructive single-event effects in semiconductor devices and ICs F.W. Sexton IEEE Transactions on Nuclear Science Electrical EngineeringDestructive Single-event EffectsEngineeringBias Temperature InstabilityTime-dependent Dielectric Breakdown	2003	264
SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments P.E. Dodd, A.R. Shaneyfelt, K.M. Horn, IEEE Transactions on Nuclear Science First-principles CalculationsEngineeringSilicon On InsulatorSoi SramsIon Implantation	2001	184
Critical charge concepts for CMOS SRAMs P.E. Dodd, F.W. Sexton IEEE Transactions on Nuclear Science Hardware SecurityDevice ModelingElectrical EngineeringEngineeringVlsi Design	1995	166
Correlation of Radiation Effects in Transistors and Integrated Circuits F.W. Sexton, James R. Schwank IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringVlsi DesignNanoelectronics	1985	162
Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices M.R. Shaneyfelt, J.R. Schwank, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Field DependenceInterface-trap BuildupElectrical EngineeringEngineeringPhysics	1990	157
Precursor ion damage and angular dependence of single event gate rupture in thin oxides F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringPrecursor Ion DamagePhysics	1998	134
Three-dimensional simulation of charge collection and multiple-bit upset in Si devices P.E. Dodd, F.W. Sexton, P.S. Winokur IEEE Transactions on Nuclear Science Basic Charge-collection MechanismsEngineeringCharge TransportSemiconductor DeviceNanoelectronics	1994	126
Impact of technology trends on SEU in CMOS SRAMs P.E. Dodd, F.W. Sexton, G.L. Hash, IEEE Transactions on Nuclear Science Hardware SecuritySeu HardnessElectrical EngineeringTechnology TrendsEngineering	1996	123
Single event gate rupture in thin gate oxides F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt, IEEE Transactions on Nuclear Science Thin Gate OxidesElectrical EngineeringSegr DataEngineeringPhysics	1997	119

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