F.W. Sexton

Physical Mechanisms Contributing to Device "Rebound"

J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 358 citations

Electrical Engineering, Ion Implantation, Engineering +13

Destructive single-event effects in semiconductor devices and ICs

F.W. Sexton · IEEE Transactions on Nuclear Science · 2003 · 264 citations

Electrical Engineering, Destructive Single-event Effects, Engineering +7

SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

P.E. Dodd, A.R. Shaneyfelt, K.M. Horn et al. · IEEE Transactions on Nuclear Science · 2001 · 184 citations

First-principles Calculations, Engineering, Silicon On Insulator +16

Critical charge concepts for CMOS SRAMs

P.E. Dodd, F.W. Sexton · IEEE Transactions on Nuclear Science · 1995 · 166 citations

Hardware Security, Device Modeling, Electrical Engineering +13

Correlation of Radiation Effects in Transistors and Integrated Circuits

F.W. Sexton, James R. Schwank · IEEE Transactions on Nuclear Science · 1985 · 162 citations

Device Modeling, Electrical Engineering, Engineering +14