T. Sorsch

The electronic structure at the atomic scale of ultrathin gate oxides

David A. Muller, T. Sorsch, S. Moccio et al. · Nature · 1999 · 961 citations

Natural Sciences, Materials Science, Physics +16

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ultra-thin gate dielectrics: they break down, but do they fail?

B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

Multi-component high-K gate dielectrics for the silicon industry

L. Manchanda, M.D. Morris, M.L Green et al. · Microelectronic Engineering · 2001 · 124 citations

Engineering, Electrical Engineering, Materials Science +14

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J. M. Hergenrother, D. Monroe, F. Klemens et al. · 2003 · 91 citations

Engineering, Electrical Engineering, Materials Science +17