J.G. Fiorenza

Film thickness constraints for manufacturable strained silicon CMOS

J.G. Fiorenza, G. Braithwaite, C. W. Leitz et al. · Semiconductor Science and Technology · 2003 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS

J.G. Fiorenza, Ji‐Soo Park, Jennifer M. Hydrick et al. · ECS Transactions · 2010 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Strained Si on insulator technology: from materials to devices

T. A. Langdo, M. T. Currie, Zhiyuan Cheng et al. · Solid-State Electronics · 2004 · 55 citations

Engineering, Materials Engineering, Materials Science +12

Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon

J.G. Fiorenza, Jesús A. del Alamo · IEEE Transactions on Electron Devices · 2002 · 51 citations

Engineering, Electrical Engineering, Microelectronics +16

Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI

Isaac Lauer, T. A. Langdo, Zhiyuan Cheng et al. · IEEE Electron Device Letters · 2004 · 46 citations

Engineering, Electrical Engineering, Materials Science +17