Jennifer M. Hydrick

(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS

J.G. Fiorenza, Ji‐Soo Park, Jennifer M. Hydrick et al. · ECS Transactions · 2010 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

Ji‐Sang Park, M. Curtin, Jennifer M. Hydrick et al. · Electrochemical and Solid-State Letters · 2009 · 44 citations

Engineering, Materials Engineering, Materials Science +17

Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Yanqing Wu, Min Xu, P. D. Ye et al. · Applied Physics Letters · 2008 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

Jizhong Li, Jie Bai, Jennifer M. Hydrick et al. · ECS Transactions · 2009 · 27 citations

Engineering, Materials Engineering, Materials Science +17

Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping

S.L. Rommel, D. Pawlik, Paul M. Thomas et al. · 2008 · 18 citations

Engineering, Electrical Engineering, Materials Science +15