Electrochemical and Solid-State Letters · 2009 · 44 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsEpitaxial GrowthIii-v SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor InterfacesDefect FormationEpitaxial DefectsEpitaxial Lateral OvergrowthIntegration Of Iii-v MaterialsInterface Trap DensityMechanical PolishingPolishingSilicon Epitaxy
Low-defect-density Ge epitaxy was fabricated using aspect ratio trapping combined with epitaxial lateral overgrowth techniques. Dislocations from the interface were trapped inside oxide trenches, and then Ge was laterally grown to form wide, long strips. Chemical mechanical polishing of Ge was used to planarize the faceted strips. Uncoalesced Ge strips showed a defect density as low as from plan-view transmission electron microscopy, while coalesced Ge had higher defect density. This approach shows great promise for the integration of low-defect-density Ge and III–V materials on Si.
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