M. Carroll

Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

J. Z. Li, Jie Bai, Ji‐Sang Park et al. · Applied Physics Letters · 2007 · 153 citations

Engineering, Electrical Engineering, Materials Science +17

(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS

J.G. Fiorenza, Ji‐Soo Park, Jennifer M. Hydrick et al. · ECS Transactions · 2010 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

Jiaxin Li, Jie Bai, Cheryl Major et al. · Journal of Applied Physics · 2008 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +17

Development of a 16.8% Efficient 18-μm Silicon Solar Cell on Steel

Lu Wang, Anthony Lochtefeld, Jianshu Han et al. · IEEE Journal of Photovoltaics · 2014 · 58 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

Ji‐Sang Park, M. Curtin, Jennifer M. Hydrick et al. · Electrochemical and Solid-State Letters · 2009 · 44 citations

Engineering, Materials Engineering, Materials Science +17