Anthony Lochtefeld

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Minjoo Larry Lee, Eugene A. Fitzgerald, Mayank T. Bulsara et al. · Journal of Applied Physics · 2004 · 957 citations

Engineering, Electrical Engineering, Materials Science +17

High quality Ge on Si by epitaxial necking

T. A. Langdo, C. W. Leitz, M. T. Currie et al. · Applied Physics Letters · 2000 · 206 citations

Engineering, Materials Engineering, Materials Science +17

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

J.-S. Park, Jie Bai, M. Curtin et al. · Applied Physics Letters · 2007 · 166 citations

Engineering, Materials Engineering, Materials Science +17

On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

Anthony Lochtefeld, D.A. Antoniadis · IEEE Electron Device Letters · 2001 · 165 citations

Engineering, Electrical Engineering, Heat Transfer +15

Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

J. Z. Li, Jie Bai, Ji‐Sang Park et al. · Applied Physics Letters · 2007 · 153 citations

Engineering, Electrical Engineering, Materials Science +17