S.L. Rommel - Concepedia

Author

S.L. Rommel

United States Naval Research Laboratory ORCID

Also Known As

Manz, D., Nölker, S., S. L. Rommel, S. Rommel, S.L. Rommel, Sean L. Rommel, Sean Rommel

Publications

979

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Rochester Institute of Technology The Ohio State University University of Delaware RTX (United States)

About

S.L. Rommel is an author at United States Naval Research Laboratory specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	24	858
2	Applied Physics	17	23	808
3	Electrical Engineering	16	22	765
4	Materials Science	4	4	224
5	Computer Engineering	3	3	34

S.L. Rommel

Publications

879

Citations

H-Index

Page 1

	Year	Citations
Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes S.L. Rommel, Thomas E. Dillon, M. W. Dashiell, Applied Physics Letters EngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	1998	108
Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope Jae‐Hyung Jang, Weifeng Zhao, Joonho Bae, Applied Physics Letters Optical MaterialsEngineeringAfm TipMicroscopyIon Beam Instrumentation	2003	68
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Cristian Rivas, Roger K. Lake, Gerhard Klimeck, Applied Physics Letters EngineeringSilicon Tunnel DiodeOptoelectronic DevicesSemiconductor DeviceSemiconductors	2001	66
Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR Ni Jin, Sung-Yong Chung, R.M. Heyns, IEEE Electron Device Letters Electrical EngineeringEngineeringTunneling MicroscopyDevice IntegrationNanoelectronics	2004	66
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing M. W. Dashiell, R. T. Troeger, S.L. Rommel, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringTunneling Probability	2000	57
Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication S.L. Rommel, Jae‐Hyung Jang, Wu Lu, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceIn0.53ga0.47as Heterostructures ResultsElectrical EngineeringInp Racetrack ResonatorEngineering	2002	52
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S. Sudirgo, R.P. Nandgaonkar, B. Curanovic, Solid-State Electronics Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignDevice Integration	2004	50
Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions Niu Jin, Sung-Yong Chung, Anthony T. Rice, IEEE Transactions on Electron Devices Materials ScienceRoom TemperatureElectrical EngineeringB DiffusionPmos Source/drain Regions	2003	47
Full band modeling of the excess current in a delta-doped silicon tunnel diode Cristian Rivas, Roger K. Lake, William R. Frensley, Journal of Applied Physics EngineeringBandtail StatesCurrent TunnelingSemiconductor DeviceQuantum Engineering	2003	37
Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Sung-Yong Chung, Niu Jin, Paul R. Berger, Applied Physics Letters Monolithic Vertical IntegrationElectrical EngineeringEngineeringVlsi DesignNanoelectronics	2004	34

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