S.L. Rommel

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

S.L. Rommel, Thomas E. Dillon, M. W. Dashiell et al. · Applied Physics Letters · 1998 · 108 citations · Full text

Engineering, Semiconductor Materials, Optoelectronic Devices +16

Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope

Jae‐Hyung Jang, Weifeng Zhao, Joonho Bae et al. · Applied Physics Letters · 2003 · 68 citations

Optical Materials, Engineering, Afm Tip +22

Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

Cristian Rivas, Roger K. Lake, Gerhard Klimeck et al. · Applied Physics Letters · 2001 · 66 citations

Engineering, Silicon Tunnel Diode, Optoelectronic Devices +21

Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR

Ni Jin, Sung-Yong Chung, R.M. Heyns et al. · IEEE Electron Device Letters · 2004 · 66 citations

Electrical Engineering, Engineering, Tunneling Microscopy +13

Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

M. W. Dashiell, R. T. Troeger, S.L. Rommel et al. · IEEE Transactions on Electron Devices · 2000 · 57 citations

Materials Science, Electrical Engineering, Semiconductor Device +13