R. T. Troeger

Electroluminescence at 7 terahertz from phosphorus donors in silicon

Panpan Lv, R. T. Troeger, Thomas Adam et al. · Applied Physics Letters · 2004 · 68 citations

Thz Photonics, Terahertz Technology, Engineering +21

Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

M. W. Dashiell, R. T. Troeger, S.L. Rommel et al. · IEEE Transactions on Electron Devices · 2000 · 57 citations

Materials Science, Electrical Engineering, Semiconductor Device +13

Terahertz electroluminescence from boron-doped silicon devices

Thomas Adam, R. T. Troeger, S. K. Ray et al. · Applied Physics Letters · 2003 · 53 citations

Thz Photonics, Terahertz Technology, Engineering +17

1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes

Xiaoping Shao, S.L. Rommel, B. A. Orner et al. · Applied Physics Letters · 1998 · 26 citations

Optical Materials, Engineering, Reverse Saturation +16

Terahertz emission from electrically pumped gallium doped silicon devices

Panpan Lv, R. T. Troeger, S. Kim et al. · Applied Physics Letters · 2004 · 26 citations

Thz Photonics, Terahertz Technology, Engineering +20