Sung-Yong Chung

Tri-State Logic Using Vertically Integrated Si–SiGe Resonant Interband Tunneling Diodes With Double NDR

Ni Jin, Sung-Yong Chung, R.M. Heyns et al. · IEEE Electron Device Letters · 2004 · 66 citations

Electrical Engineering, Engineering, Tunneling Microscopy +13

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Niu Jin, Sung-Yong Chung, Anthony T. Rice et al. · IEEE Transactions on Electron Devices · 2003 · 47 citations

Materials Science, Room Temperature, Electrical Engineering +14

Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic

Woojun Yoon, Sung-Yong Chung, Paul R. Berger et al. · Applied Physics Letters · 2005 · 46 citations

Engineering, Organic Electronics, Responsive Polymers +24

151  kA/cm 2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications

Niu Jin, Sung-Yong Chung, Anthony T. Rice et al. · Applied Physics Letters · 2003 · 45 citations

Semiconductor Technology, Electrical Engineering, Highest Pvcr +12

Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

Sung-Yong Chung, Niu Jin, Paul R. Berger et al. · Applied Physics Letters · 2004 · 34 citations

Monolithic Vertical Integration, Electrical Engineering, Engineering +11