151 kA/cm 2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications

Abstract

Room-temperature I–V characteristics of epitaxially grown Si/SiGe resonant interband tunneling diodes (RITDs) with extremely high peak current densities are presented. By optimizing the physical design, doping concentrations, and post-growth anneal temperatures, RITDs having peak current densities over 150 kA/cm2, peak-to-valley current ratios (PVCRs) greater than 2, and an estimated speed index of 34 mV/ps have been obtained. The interplay among the conditions to achieve maximum current density and highest PVCR is discussed. This result demonstrates the high potential of this type of Si-based tunnel diode for high-power mixed-signal applications.