Abhishek Banerjee

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Michael J. Uren, Serge Karboyan, Indranil Chatterjee et al. · IEEE Transactions on Electron Devices · 2017 · 226 citations · Full text

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Isabella Rossetto, Matteo Meneghini, Alaleh Tajalli et al. · IEEE Transactions on Electron Devices · 2017 · 127 citations

Dynamic On-resistance, Wide-bandgap Semiconductor, Electrical Engineering +10

Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Matteo Meneghini, P. Vanmeerbeek, Riccardo Silvestri et al. · IEEE Transactions on Electron Devices · 2015 · 118 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +16

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

P. Moens, P. Vanmeerbeek, Abhishek Banerjee et al. · 2015 · 109 citations

Engineering, Gan Power Devices, Power Electronics +16

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

Matteo Meneghini, Alaleh Tajalli, P. Moens et al. · Materials Science in Semiconductor Processing · 2017 · 107 citations · Full text

Gan-based Power Hemts, Electrical Engineering, Dynamic Ron +11