Applied Physics Letters · 2017 · 87 citations · 16 references
Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceInterface ChargeEngineeringElectronic EngineeringApplied PhysicsInterface ChargesGallium OxideMolecular Beam EpitaxyMicroelectronicsSn-doped β-Ga2o3 MosfetsAnalytical Model
We report on Sn-doped β-Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 × 1018 to 1.6 × 1018 cm−3 and a fixed channel thickness of 200 nm. A pulsed current density of >450 mA/mm was achieved on the sample with the lowest sheet resistance and a gate length of 2 μm. Our results are explained using a simple analytical model with a measured gate voltage correction factor based on interface charges that accurately predict the electrical performance for all doping variations.
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Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura et al. · Applied Physics Letters · 2013 · 696 citations
Materials Science, Semiconductor Technology, Electrical Engineering +13