Yeqing Lu

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

Rui Li, Yeqing Lu, Guangle Zhou et al. · IEEE Electron Device Letters · 2012 · 136 citations

Device Modeling, Electrical Engineering, Engineering +8

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Yeqing Lu, Guangle Zhou, Rui Li et al. · IEEE Electron Device Letters · 2012 · 123 citations

Device Modeling, Algasb/inas Tfets, Electrical Engineering +11

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V

Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Guangle Zhou, Yeqing Lu, Rui Li et al. · IEEE Electron Device Letters · 2012 · 92 citations

Semiconductor Technology, Ingaas/inp Tunnel Fets, Electrical Engineering +10

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Wenjun Li, Debdeep Jena, Patrick Fay et al. · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2015 · 81 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11