IntelliEPI (United States)

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V

Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Guangle Zhou, Yeqing Lu, Rui Li et al. · IEEE Electron Device Letters · 2012 · 92 citations

Semiconductor Technology, Ingaas/inp Tunnel Fets, Electrical Engineering +10

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Guangle Zhou, Yeqing Lu, Rui Li et al. · IEEE Electron Device Letters · 2011 · 70 citations

Semiconductors, Device Modeling, Electrical Engineering +10

Electron density dependence of in-plane spin relaxation anisotropy in GaAs∕AlGaAs two-dimensional electron gas

Baoli Liu, Hongming Zhao, Jia Wang et al. · Applied Physics Letters · 2007 · 33 citations · Full text

Relaxation Process, Engineering, Spin-charge Conversion +22

Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

Sanghyeon Kim, Yuki Ikku, Masafumi Yokoyama et al. · Applied Physics Letters · 2014 · 29 citations

Electrical Engineering, Wafer Scale Processing, Engineering +11