AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

Rui Li, Yeqing Lu, Guangle Zhou, +10

IEEE Electron Device Letters

Device ModelingElectrical EngineeringEngineeringHigh-speed ElectronicsElectronic Engineering +6

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Yeqing Lu, Guangle Zhou, Rui Li, +9

IEEE Electron Device Letters

Device ModelingAlgasb/inas TfetsElectrical EngineeringEngineeringTunneling Direction +9

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V

Guangle Zhou, R. Li, T. Vasen, +11

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering +10

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Guangle Zhou, Yeqing Lu, Rui Li, +10

IEEE Electron Device Letters

Semiconductor TechnologyIngaas/inp Tunnel FetsElectrical EngineeringSub XmlnsEngineering +8

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Guangle Zhou, Yeqing Lu, Rui Li, +13

IEEE Electron Device Letters

SemiconductorsDevice ModelingElectrical EngineeringTunneling NormalEngineering +8

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

Joseph Casamento, Thai‐Son Nguyen, Yong-Jin Cho, +6

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringPolarization-induced 2DSemiconductorsElectronic Devices +14

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs

T. Vasen, P. Ramvall, Aryan Afzalian, +6

Scientific Reports

Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs

M.J.H. van Dal, G. Vellianitis, G. Doornbos, +10

Materials ScienceElectrical EngineeringLateral Nw FetsEngineeringNanotechnology +12

InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field

Rui Li, Yeqing Lu, Soo Doo Chae, +12

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +8

InAs FinFETs With H_finnm Fabricated Using a Top–Down Etch Process

R. Oxland, X. Li, S. W. Chang, +15

IEEE Electron Device Letters