IEEE Electron Device Letters · 2012 · 137 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsQuantum TunnelingWide Band Gap SemiconductorsField-effect Transistor SimulationHeterojunction DevicesNumerical Device SimulationNumerical SimulationSwitching PerformanceTunnel JunctionsTunneling CurrentTunneling Field-effect Transistors
Record high on-current of 78 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu\hbox{A}/\mu\hbox{m}$</tex></formula> in a tunnel field-effect transistor (TFET) is achieved at 0.5 V at room temperature. The TFET employs a staggered AlGaSb/InAs heterojunction with the tunneling direction oriented in-line with the gate field. The measured results are consistent with numerical simulation of the device structure. Simulations of optimized structures suggest that switching speed comparable to that of the MOSFET should be achievable with improvements in the source and drain resistances.
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S. Mookerjea, D. K. Mohata, R. Krishnan et al. · 2009 · 122 citations
Engineering, Computer Engineering, Electrical Engineering +11