Tom Kosel

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

Rui Li, Yeqing Lu, Guangle Zhou et al. · IEEE Electron Device Letters · 2012 · 137 citations

Engineering, Electrical Engineering, Materials Science +16

Crystal structure dependence of the elastic constants of gold nanorods

Hristina Petrova, Jorge Pérez‐Juste, Zhenyuan Zhang et al. · Journal of Materials Chemistry · 2006 · 115 citations

Natural Sciences, Materials Science, Physics +17

InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$

Guangle Zhou, Yeqing Lu, Rui Li et al. · IEEE Electron Device Letters · 2012 · 93 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate

Guangle Zhou, Yeqing Lu, Rui Li et al. · IEEE Electron Device Letters · 2011 · 71 citations

Engineering, Electrical Engineering, Materials Science +14

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

Yu Cao, Kejia Wang, Guowang Li et al. · Journal of Crystal Growth · 2010 · 62 citations

Engineering, Materials Engineering, Materials Science +16