Charge transport mechanism in metal-nitride-oxide-silicon structures

Abstract

A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.