Mark A. Wistey

Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

D. Jackrel, Seth R. Bank, H. B. Yuen et al. · Journal of Applied Physics · 2007 · 215 citations

Materials Science, Electrical Engineering, Epitaxial Growth +12

AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V

Rui Li, Yeqing Lu, Guangle Zhou et al. · IEEE Electron Device Letters · 2012 · 136 citations

Device Modeling, Electrical Engineering, Engineering +8

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned

Yeqing Lu, Guangle Zhou, Rui Li et al. · IEEE Electron Device Letters · 2012 · 123 citations

Device Modeling, Algasb/inas Tfets, Electrical Engineering +11

Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V

Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12