Concepedia
Statistics
Publications
81
Citations
3.1K
H-Index
33
Active since
2002
Affiliations
Stanford University(Current)
University of California, Santa Barbara
University of Notre Dame
Wrocław University of Science and Technology
The University of Texas at Austin
Mark A. Wistey is an author at Stanford University specializing in materials science, engineering, and semiconductor devices.
Publications per year
2002–2022
Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
D. Jackrel, Seth R. Bank, H. B. Yuen et al. · Journal of Applied Physics · 2007 · 217 citations
Engineering, Materials Engineering, Materials Science +17
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$
Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 137 citations
Engineering, Electrical Engineering, Materials Science +16
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V
Rui Li, Yeqing Lu, Guangle Zhou et al. · IEEE Electron Device Letters · 2012 · 137 citations
Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
Yeqing Lu, Guangle Zhou, Rui Li et al. · IEEE Electron Device Letters · 2012 · 126 citations
Engineering, Electrical Engineering, Electronic Materials +16
Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 &#x03BC;A/&#x03BC;m at V<inf>DS</inf> &#x003D; 0.5 V
Guangle Zhou, R. Li, T. Vasen et al. · 2012 · 115 citations
Engineering, Electrical Engineering, Materials Science +17
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