Concepedia

Equivalent Oxide Thickness

Equivalent Oxide Thickness is a metric used in semiconductor device characterization that quantifies the effective thickness of a gate dielectric layer by equating its capacitance to that of a silicon dioxide layer with equivalent insulating properties, enabling direct comparison of dielectric performance across different materials.

939

Publications

40.8K

Citations

3.8K

Authors

611

Institutions

Publications per year

2017–2026

97

Variants

Eot

Parents

Publications

939

Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2000 · 972 citations

, , +17

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Byoung Hun Lee, Laegu Kang, R. Nieh et al. · Applied Physics Letters · 2000 · 606 citations

, , +17

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

G. D. Wilk, Robert M. Wallace · Applied Physics Letters · 1999 · 504 citations

, , +17

High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities

Yu-Ming Lin, Joerg Appenzeller, Joachim Knoch et al. · IEEE Transactions on Nanotechnology · 2005 · 497 citations · Full text

, , +17

Predictive Modeling of the NBTI Effect for Reliable Design

Sarvesh Bhardwaj, Wenping Wang, Rakesh Vattikonda et al. · 2006 · 432 citations

, , +16

1–5 of 939

Authors

3.8K

  1. JC
    Jack C. Lee

    The University of Texas at Austin, United States

    22 publications · 1.6K citations

    17

    h-index

  2. RN
    R. Nieh

    The University of Texas at Austin, United States

    16 publications · 2K citations

    16

    h-index

  3. MC
    Matty Caymax

    IMEC, Belgium

    17 publications · 791 citations

    16

    h-index

  4. BH
    Byoung Hun Lee

    Gwangju Institute of Science and Technology, South Korea

    16 publications · 1.7K citations

    15

    h-index

  5. SD
    Stefan De Gendt

    IMEC, Belgium

    18 publications · 508 citations

    15

    h-index

1–5 of 3.8K

Institutions

611

  1. The University of Texas at Austin

    Austin, United States

    37 h-index

    372 publications

    24.2K citations

  2. IMEC

    Leuven, Belgium

    29 h-index

    445 publications

    15.4K citations

  3. National University of Singapore

    Singapore, Singapore

    23 h-index

    149 publications

    7.4K citations

  4. North Carolina State University

    Raleigh, United States

    22 h-index

    103 publications

    5.6K citations

  5. KU Leuven

    Leuven, Belgium

    21 h-index

    97 publications

    3.2K citations

  6. University of California, Berkeley

    Berkeley, United States

    19 h-index

    83 publications

    4.8K citations

  7. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    18 h-index

    87 publications

    3.3K citations

  8. Texas Instruments (United States)

    Dallas, United States

    18 h-index

    76 publications

    9.6K citations

1–8 of 611

Venues

  1. Applied Physics Letters

    175 publications · 10.5K citations

    56

    h-index

  2. IEEE Transactions on Electron Devices

    106 publications · 4.8K citations

    40

    h-index

  3. IEEE Electron Device Letters

    99 publications · 5K citations

    39

    h-index

  4. Journal of Applied Physics

    61 publications · 3.6K citations

    33

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 48 publications · 1.2K citations

    21

    h-index

1–5