Laegu Kang - Concepedia

Author

Laegu Kang

The University of Texas at Austin

Also Known As

L. Kang, L.-G. Kang, L.G. Kang, LaeGu Kang, Laegu Kang, Limei Kang

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

The University of Texas at Austin IBM (United States)

About

Laegu Kang is an author at The University of Texas at Austin specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	19	1.7K
2	Applied Physics	16	19	1.7K
3	Electrical Engineering	16	19	1.7K
4	Materials Engineering	7	7	593
5	Computer Engineering	3	3	89

Laegu Kang

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing Byoung Hun Lee, Laegu Kang, R. Nieh, Applied Physics Letters EngineeringThin Film Process TechnologySemiconductor DeviceElectrical CharacteristicsNanoelectronics	2000	605
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric Laegu Kang, Byoung Hun Lee, Wenjie Qi, IEEE Electron Device Letters Materials ScienceElectrical CharacteristicsElectrical EngineeringSemiconductor DeviceEngineering	2000	239
Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application Wen-Jie Qi, R. Nieh, Byoung Hun Lee, Applied Physics Letters EngineeringGate Dielectric ApplicationReliability CharacteristicsThin Film Process TechnologySilicon On Insulator	2000	172
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application Byoung Hun Lee, Laegu Kang, Wenjie Qi, EngineeringReliability CharacteristicsSemiconductor DeviceExcellent ReliabilityNanoelectronics	2003	146
Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application Wen-Jie Qi, R. Nieh, E. Dharmarajan, Applied Physics Letters EngineeringThin Film Process TechnologySilicon On InsulatorComagnetron-reactive SputteringThin Film Processing	2000	110
MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics Laegu Kang, K. Onishi, Yelim Jeon, Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsStress-induced Leakage Current	2002	74
MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si Wenjie Qi, R. Nieh, Byoung Hun Lee, Materials ScienceMaterials EngineeringElectrical EngineeringZro/sub 2/Engineering	2003	70
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 Å-12 Å) Byoung Hun Lee, Rino Choi, Laegu Kang, Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor DeviceEngineering	2002	54
Scaling of 32nm low power SRAM with high-K metal gate Haining Yang, Robert Wong, R. Hasumi, Electrical EngineeringEngineeringVlsi DesignPhysicsTechnology Scaling	2008	49
Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate Laegu Kang, Yongjoo Jeon, K. Onishi, Electrical EngineeringN+ Polysilicon GateEngineeringNanoelectronicsStress-induced Leakage Current	2002	31

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