Wayne Johnson - Concepedia

Author

Wayne Johnson

University of Notre Dame

Also Known As

Johnson, W., Johnson, Wayne, W. J. JOHNSON, W. J. Johnson, W. Johnson, W.J. Johnson, Wayne J. Johnson, Wayne Johnson

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

University of Notre Dame Kopin Corporation (United States)University of Florida Massachusetts Institute of Technology Ford Motor Company (United States)

About

Wayne Johnson is an author at University of Notre Dame specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	26	1.2K
2	Applied Physics	18	24	1.1K
3	Chemistry	3	3	112
4	Education	1	1	34
5	Natural Sciences	1	1	22

Wayne Johnson

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon Mingda Zhu, Bo Song, Meng Qi, IEEE Electron Device Letters Recessed AnodesElectrical EngineeringEngineeringHigh Voltage EngineeringDual Field-plate Structure	2015	182
210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation Ronghua Wang, Guowang Li, Oleg Laboutin, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical Engineering210-Ghz Inaln/gan HemtsPlasma Dfp	2011	101
Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors Hung-Ta Wang, B. S. Kang, TJ Chancellor, Applied Physics Letters EngineeringChemistryBiosensing SystemsAnalytical ChemistryBare Au	2007	88
Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation Thomas L. Bougher, Luke Yates, Chien-Fong Lo, Nanoscale and Microscale Thermophysical Engineering Wide-bandgap SemiconductorLayer ThicknessElectrical EngineeringSemiconductor TechnologyEngineering	2016	88
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs Ronghua Wang, Guowang Li, Jai Verma, IEEE Electron Device Letters Gan-based HemtsSemiconductor TechnologyElectrical Engineering66-Nm-long Gate DeviceEngineering	2011	85
INTERNAL FLUX MOTION IN LARGE JOSEPHSON JUNCTIONS Alwyn Scott, Wayne Johnson Applied Physics Letters Displaced Linear BranchQuantum ScienceJosephson JunctionsSuperconducting MaterialEngineering	1969	74
Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz Ronghua Wang, Guowang Li, Golnaz Karbasian, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesCutoff Frequencies	2013	71
Current flow in large Josephson junctions A. Barone, Wayne Johnson, R. Vaglio Journal of Applied Physics Majorana FermionJosephson JunctionsElectrical EngineeringEngineeringPhysics	1975	56
InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition Oleg Laboutin, Yu Cao, Wayne Johnson, Applied Physics Letters SemiconductorsRecord Electron MobilitiesElectrical EngineeringElectronic DevicesLow Growth Rate	2012	47
Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs Dong Seup Lee, Oleg Laboutin, Yu Cao, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesGate Length	2012	44

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