Wayne Johnson

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Mingda Zhu, Bo Song, Meng Qi et al. · IEEE Electron Device Letters · 2015 · 182 citations · Full text

Recessed Anodes, Electrical Engineering, Engineering +10

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Ronghua Wang, Guowang Li, Oleg Laboutin et al. · IEEE Electron Device Letters · 2011 · 101 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors

Hung-Ta Wang, B. S. Kang, TJ Chancellor et al. · Applied Physics Letters · 2007 · 88 citations

Engineering, Chemistry, Biosensing Systems +21

Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation

Thomas L. Bougher, Luke Yates, Chien-Fong Lo et al. · Nanoscale and Microscale Thermophysical Engineering · 2016 · 88 citations

Wide-bandgap Semiconductor, Layer Thickness, Electrical Engineering +15

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Ronghua Wang, Guowang Li, Jai Verma et al. · IEEE Electron Device Letters · 2011 · 85 citations

Gan-based Hemts, Semiconductor Technology, Electrical Engineering +9